ELECTRONIC PROPERTIES AND EFFECTIVE MASS CALCULATIONS OF SILICON-GERMANIUM (SIGE) ALLOYS
Abstract
Abstract
This study investigates the electronic properties and effective mass calculations of silicon-germanium (SixGe1−x) alloys using computational methods based on Density Functional Theory (DFT). By modeling the impact of varying germanium compositions on band structure, carrier mobility, and electronic transport properties, the research aims to provide insights into optimizing SiGe alloys for semiconductor applications. The results indicate that increasing germanium content leads to a decrease in the effective mass of holes and electrons, thereby improving carrier mobility. These findings hold significant implications for high-speed electronic and optoelectronic devices, where material tunability is essential for performance enhancement. The study also highlights the need for experimental validation and further exploration of strain effects to refine predictive models.
Full-Text Access Notice
In accordance with the NERD Policy on promoting peer-reviewed publication, public access to the full text of a project, thesis or dissertation is restricted for three years, allowing the author and supervisors sufficient time to pursue peer-reviewed publication.
During this period, researchers with legitimate academic or research purposes may request authorisation directly from the author to enable NERD to release the indexed full texts of the work using the form below.